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Ph.D. in the Field of GaN Transistor Reliability

Fraunhofer-Gesellschaft · Freiburg im Breisgau

Ph.D. in the Field of GaN Transistor Reliability

Employer
Fraunhofer-Gesellschaft
Location
Freiburg im Breisgau
Fields of study
Elektrotechnik, Ingenieurwesen, Physik
Last updated
11 November 2026
connecticum job no.
1867339

Job description

Apply now » City: Freiburg Date: Nov 11, 2026 Ph.D. in the Field of GaN Transistor Reliability The Fraunhofer-Gesellschaft (www.fraunhofer.com ) is one of the world's leading organizations for application-oriented research. 74 institutes develop pioneering technologies for our economy and society – more precisely: 30 000 people from technology, science, administration and IT. They know: Anyone who comes to Fraunhofer wants to and can make a difference.

For themselves, for us and for the markets of today and tomorrow. INNOVATIONS FROM A SINGLE SOURCE CHANGE STARTS WITH US At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society.

How can GaN-based transistors for high-frequency applications be made more reliable? In your PhD research, you’ll get to the bottom of this question: You’ll investigate degradation mechanisms and develop approaches to specifically improve the devices. In doing so, you’ll work closely with colleagues from the fields of technology, epitaxy, and measurement technology. Be part of change You’ll conduct reliability tests, analyze degraded devices, and actively contribute to identifying physical failure mechanisms.

Using simulations, you will optimize the devices and develop them further in a targeted manner. You will develop robust methods for electrical characterization and reliability assessment. Planning, conducting, and monitoring technology experiments for the fabrication of GaN HEMTs with improved reliability is also part of your responsibilities. What you contribute A master’s degree in electrical engineering, microsystems engineering, physics, or a related field, as well as, ideally, knowledge of solid-state and semiconductor physics.

A passion for experimental research, an interest in analysis and simulation, and some experience in programming and data analysis. An independent, structured, and scientific approach to work; the ability to quickly familiarize yourself with new research questions; and strong teamwork and communication skills. Very good German and good English skills for working in an international environment.

What we offer

State-of-the-art research infrastructure with unique facilities spanning the entire value chain Opportunities for specialization and interdisciplinary work through a wide range of research areas Ongoing participation in current research discourse and freedom in conducting one’s own research Collaboration with colleagues within the Fraunhofer Society as well as with other scientific institutions and industry Opportunities for personal development through a wide range of continuing education programs and participation in international conferences Comprehensive benefits, including a company pension plan (VBL), a subsidy for the Deutschland-Ticket/Jobticket, and a variety of wellness programs (e.g., Pilates) A family-friendly workplace with programs to support work-life balance (child-friendly office, the option to work remotely, and more) Free parking garage with electric vehicle charging stations, a Frelo station (bike-sharing system), and a bus stop right at the institute The weekly working time is 39 hours.

This position is also available on a part-time basis. We value and promote the diversity of our employees' skills and therefore welcome all applications – regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons are given preference in the event of equal suitability. Our tasks are diverse and adaptable – for applicants with disabilities, we work together to find solutions that best promote their abilities.

Appointment, remuneration and social security benefits based on the public-sector collective wage agreement (TVöD). Additionally Fraunhofer may grant performance-based variable remuneration components. With its focus on developing key technologies that are vital for the future and enabling the commercial utilization of this work by business and industry, Fraunhofer plays a central role in the innovation process. As a pioneer and catalyst for groundbreaking developments and scientific excellence, Fraunhofer helps shape society now and in the future.

Ready for a change? Then apply now and make a difference! Once we have received your online application, you will receive an automatic confirmation of receipt. We will then get back to you as soon as possible and let you know what happens next. Do you have questions about the position, the application process, or accessibility? Do you need assistance?Our recruiter, Kathrin Escher, is here to help: +49 761 5159-374recruiting@iaf.fraunhofer.de Fraunhofer Institute for Applied Solid State Physics IAF www.iaf.fraunhofer.de Requisition Number: 86183 Application Deadline: Job Segment: Semiconductor, Data Analyst, Electrical Engineering, Part Time, Science, Research, Engineering, Data Apply now »

About Fraunhofer-Gesellschaft

Employees
10.001 - 50.000
Company language
Deutsch
Website
fraunhofer.de
Careers website
fraunhofer.de/de/jobs-und-karriere.html

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